IVA-5 Refractory p-Ohmic-Contact to GaAs and GaxAl1 - xAs (x ∼ 0.3) Based on Diffusion of Zn in a Rapid Thermal Furnace
- Sandip Tiwari
- Jeffrey Hintzman
- et al.
- 1987
- IEEE T-ED
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Transport and Related Properties of (Ga, Al)As/GaAs Double Heterostructure Bipolar Junction Transistors
- Sandip Tiwari
- Steven L. Wright
- et al.
- 1987
- IEEE T-ED
In situ contacts to GaAs based on InAs
- S.L. Wright
- R.F. Marks
- et al.
- 1986
- Applied Physics Letters
IIIA-2 Simulation and Analysis of Recombination and Grading Effects in GaAlAs/GaAs HBT's
- Sandip Tiwari
- David J. Frank
- 1986
- IEEE T-ED
PERFORMANCE OF HETEROSTRUCTURE FET'S IN LSI.
- S. Tiwari
- 1986
- IEEE T-ED
Platinum intermetallic resistors for GaAs-based circuits
- S. Tiwari
- W.H. Price
- 1985
- Electronics Letters
VA-6 Temperature-Dependent Properties of the Double HBJT
- S. Tiwari
- S.L. Wright
- et al.
- 1985
- IEEE T-ED
IIIA-4 P-channel Ga0.5 Al0.5 As/GaAs MODFET's
- W.I. Wang
- S. Tiwari
- 1984
- IEEE T-ED
Threshold and Sheet Concentration Sensitivity of High Electron Mobility Transistors
- Sandip Tiwari
- 1984
- IEEE T-ED
IIA-6 Sensitivity of Threshold Voltage and Sheet Carrier Concentration to Material and Electronic Parameters in a HEMT Device
- Sandip Tiwari
- 1983
- IEEE T-ED