Ion sensing with single charge resolution using sub–10-nm electrical double layer–gated silicon nanowire transistors
- Qitao Hu
- Si Chen
- et al.
- 2021
- Science Advances
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7 results for Si Chen
Ultra-Low Noise Schottky Junction Tri-Gate Silicon Nanowire FET on Bonded Silicon-on-Insulator Substrate
- Yingtao Yu
- Si Chen
- et al.
- 2021
- IEEE Electron Device Letters
Effects of Substrate Bias on Low-Frequency Noise in Lateral Bipolar Transistors Fabricated on Silicon-on-Insulator Substrate
- Qitao Hu
- Si Chen
- et al.
- 2020
- IEEE Electron Device Letters
Top-bottom gate coupling effect on low frequency noise in a schottky junction gated silicon nanowire field-effect transistor
- Xi Chen
- Si Chen
- et al.
- 2019
- IEEE J-EDS
Low-Noise Schottky Junction Trigate Silicon Nanowire Field-Effect Transistor for Charge Sensing
- Xi Chen
- Si Chen
- et al.
- 2019
- IEEE T-ED
Device noise reduction for silicon nanowire field-effect-Transistor based sensors by using a schottky junction gate
- Xi Chen
- Si Chen
- et al.
- 2019
- ACS Sensors
An ion-gated bipolar amplifier for ion sensing with enhanced signal and improved noise performance
- Da Zhang
- Xindong Gao
- et al.
- 2014
- Applied Physics Letters