Demonstration of electroluminescence from strained Ge membrane LED
- Donguk Nam
- David Sukhdeo
- et al.
- 2012
- ISTDM 2012
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5 results for Krishna C. Saraswat
New materials for post-Si computing: Ge and GeSn devices
- Suyog Gupta
- Xiao Gong
- et al.
- 2014
- MRS Bulletin
Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser
- Donguk Nam
- David Sukhdeo
- et al.
- 2012
- Applied Physics Letters
On the high-field transport and uniaxial stress effect in Ge PFETs
- Masaharu Kobayashi
- Jérǒme Mitard
- et al.
- 2011
- IEEE T-ED
Metal-induced dopant (boron and phosphorus) activation process in amorphous germanium for monolithic three-dimensional integration
- Jin-Hong Park
- Munehiro Tada
- et al.
- 2009
- Journal of Applied Physics