Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique
- J.N. Burghartz
- J. Wamock
- et al.
- 1992
- ESSDERC 1992
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76 results for John D. Cressler
Device design issues for a high-performance bipolar technology with Si or SiGe epitaxial base
- J.N. Burghartz
- J.D. Cressler
- et al.
- 1991
- ESSDERC 1991
Advanced bipolar technology for the 1990s
- J.Y.-C. Sun
- J.H. Comfort
- et al.
- 1991
- VLSI-TSA 1991
A 26 ps self-aligned epitaxial silicon base bipolar technology
- J.H. Comfort
- P.F. Lu
- et al.
- 1990
- VLSI Technology 1990
Sub-100 pS silicon bipolar ECL circuit operation at liquid nitrogen temperatures
- J.D. Cressler
- T.C. Chen
- et al.
- 1989
- Bipolar Circuits and Technology Meeting 1989
Submicron high performance bipolar technology
- T.C. Chen
- J.D. Cressler
- et al.
- 1989
- VLSI Technology 1989
Effects of injection induced bandgap narrowing on bipolar transistors operating at low temperatures
- J.D. Cressler
- D.D. Tang
- et al.
- 1989
- Workshop on Low Temperature Semiconductor Electronics 1989
On the Temperature Dependence of Majority Carrier Transport in Heavily Arsenic-Doped Polycrystalline Silicon Thin Films
- John D. Cressler
- Wei Hwang
- et al.
- 2019
- JES
Impact of technology scaling in sub-100 nm nMOSFETs on total-dose radiation response and hot-carrier reliability
- Rajan Arora
- Zachary E. Fleetwood
- et al.
- 2014
- IEEE TNS
An investigation of single event transient response in 45-nm and 32-nm SOI RF-CMOS devices and circuits
- Troy D. England
- Rajan Arora
- et al.
- 2013
- IEEE TNS