Voltage ramp stress for hot-carrier screening of scaled CMOS devicesA. KerberW. McMahonet al.2012IEEE Electron Device Letters
Intrinsic dielectric stack reliability of a high performance bulk planar 20nm replacement gate high-k metal gate technology and comparison to 28nm gate first high-k metal gate processW. McMahonC. Tianet al.2013IRPS 2013
Fast characterization of the Static Noise Margin degradation of cross-coupled inverters and correlation to BTI instabilities in MG/HK devicesAndreas KerberN. Pimparkaret al.2011IRPS 2011