A 0.5 μm fully scaled two-level metal fully planarized interconnect structure fabricated with X-ray lithography
- D. Moy
- L.K. Wang
- et al.
- 1990
- VLSI Technology 1990
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149 results for C. K. Hu
Dry etching of TiN/Al(Cu)/Si for very large scale integrated local interconnections
- K.W. Choi
- N.J. Mazzeo
- et al.
- 1990
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Two-level metal fully planarized interconnect structure implemented on a 64 kb CMOS SRAM
- D. Moy
- M. Schadt
- et al.
- 1989
- VMIC 1989
0.5 μm CMOS devices and circuits fabricated using synchrotron X-ray lithography
- L.K. Wang
- C.H. Hsu
- et al.
- 1989
- VLSI Technology 1989
On the preparation of cross-sectional TEM samples using lithographic processing and reactive ion-etching
- J.T. Wetzel
- M. Jost
- et al.
- 1989
- Ultramicroscopy
A process for improved Al (Cu) reactive ion etching
- C.-K. Hu
- B. Canney
- et al.
- 1989
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
REACTIVE ION ETCHING OF Al(Cu) ALLOYS.
- C.-K. Hu
- M.B. Small
- et al.
- 1986
- MRS Fall Meeting 1986
DIFFUSION BARRIER STUDIES FOR Cu.
- C.-K. Hu
- S. Chang
- et al.
- 1985
- VMIC 1985
TEMPERATURE DEPENDENCE OF STRESSES IN Ti, Cr, AND Cu THIN FILMS.
- C.-K. Hu
- D. Gupta
- et al.
- 1984
- VMIC 1984