Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires
- C. K. Hu
- James Kelly
- et al.
- 2017
- IITC 2017
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149 results for C. K. Hu
Reliable airgap BEOL technology in advanced 48 nm pitch copper/ULK interconnects for substantial power and performance benefits
- C. J. Penny
- S. Gates
- et al.
- 2017
- IITC 2017
Low hydrogen silicon carbon nitride cap for high performance sub-10 nm Cu-low k interconnect
- Son Van Nguyen
- Shobha Hosadugra
- et al.
- 2017
- ECS Meeting 2017 - New Orleans
Low hydrogen silicon carbon nitride cap for high performance sub-10 nm Cu-low k interconnect
- Son Van Nguyen
- Shobha Hosadugra
- et al.
- 2017
- ECS J. Solid State Sci. Technol.
Electromigration: Void dynamics
- C. Witt
- V. Calero
- et al.
- 2016
- IEEE T-DMR
Post porosity plasma protection integration at 48 nm pitch
- H. Huang
- Krystelle Lionti
- et al.
- 2016
- IITC/AMC 2016
Ruthenium interconnect resistivity and reliability at 48 nm pitch
- Xunyuan Zhang
- Huai Huang
- et al.
- 2016
- IITC/AMC 2016
Experimental study of nanoscale Co damascene BEOL interconnect structures
- James Kelly
- James H.-C. Chen
- et al.
- 2016
- IITC/AMC 2016
Pre-liner dielectric nitridation for resistance reduction in copper interconnects
- Chih-Chao Yang
- Terry A. Spooner
- et al.
- 2016
- IITC/AMC 2016
Ultrathin conformal multilayer SiNO dielectric cap for capacitance reduction in Cu/low k interconnects
- Deepika Priyadarshini
- Son Van Nguyen
- et al.
- 2016
- IITC/AMC 2016