Publications

149 results for C. K. Hu‬

Copper microstructure: Effect on electromigration void evolution
- - C. Witt
  - V. Calero
  - et al.
- 2010
- ADMETA 2010
Competitive and cost effective copper/low-k interconnect (BEOL) for 28nm CMOS technologies
- - Rod Augur
  - Craig Child
  - et al.
- 2010
- ADMETA 2010
Effective Cu surface pre-treatment for high-reliable 22nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k=2.2)
- - F. Ito
  - H. Shobha
  - et al.
- 2010
- ADMETA 2010
Effect of impurity on Cu electromigration
- - C.-K. Hu
  - Matthew Angyal
  - et al.
- 2010
- International Workshop STRESS-INDUCED PHENOMENA IN METALLIZATION 2010
CoWP metal caps for reliable 32 nm 1X Cu interconnects in porous ULK (k=2.4)
- - E. Huang
  - M. Oh
  - et al.
- 2009
- ADMETA 2009
Ultrathin (5-35 nm) SiCNH dielectrics for damascene Cu Cap application: Thickness scaling and oxidation barrier performance limitation
- - Son Nguyen
  - T. Haigh Jr.
  - et al.
- 2010
- ECS Meeting 2010
CVD Co and its application to Cu damascene interconnections
- - Takeshi Nogami
  - J. Maniscalco
  - et al.
- 2010
- IITC 2010
Electromigration challenges for nanoscale Cu wiring
- - C.-K. Hu
  - L. Gignac
  - et al.
- 2008
- International Workshop on Stress-Induced Phenomena in Metallization 2008
Material and process for advanced Cu/ULK integration
- - Chih-Chao Yang
  - Daniel C. Edelstein
  - et al.
- 2008
- ADMETA 2008
Advanced bilayer low-k dielectric cap for reliable high performance Cu-low k interconnects
- - Griselda Bonilla
  - Lawrence A. Clevenger
  - et al.
- 2008
- ADMETA 2008