Effective Cu surface pre-treatment for high-reliable 22nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k=2.2)
- F. Ito
- H. Shobha
- et al.
- 2010
- ADMETA 2010
Publications
149 results for C. K. Hu
Copper microstructure: Effect on electromigration void evolution
- C. Witt
- V. Calero
- et al.
- 2010
- ADMETA 2010
Competitive and cost effective copper/low-k interconnect (BEOL) for 28nm CMOS technologies
- Rod Augur
- Craig Child
- et al.
- 2010
- ADMETA 2010
Effect of impurity on Cu electromigration
- C.-K. Hu
- Matthew Angyal
- et al.
- 2010
- International Workshop STRESS-INDUCED PHENOMENA IN METALLIZATION 2010
CoWP metal caps for reliable 32 nm 1X Cu interconnects in porous ULK (k=2.4)
- E. Huang
- M. Oh
- et al.
- 2009
- ADMETA 2009
Ultrathin (5-35 nm) SiCNH dielectrics for damascene Cu Cap application: Thickness scaling and oxidation barrier performance limitation
- Son Nguyen
- T. Haigh Jr.
- et al.
- 2010
- ECS Meeting 2010
CVD Co and its application to Cu damascene interconnections
- Takeshi Nogami
- J. Maniscalco
- et al.
- 2010
- IITC 2010
Electromigration challenges for nanoscale Cu wiring
- C.-K. Hu
- L. Gignac
- et al.
- 2008
- International Workshop on Stress-Induced Phenomena in Metallization 2008
Material and process for advanced Cu/ULK integration
- Chih-Chao Yang
- Daniel C. Edelstein
- et al.
- 2008
- ADMETA 2008
Advanced bilayer low-k dielectric cap for reliable high performance Cu-low k interconnects
- Griselda Bonilla
- Lawrence A. Clevenger
- et al.
- 2008
- ADMETA 2008