Monte-Carlo simulations of performance scaling in strained-Si nMOSFETs
- Arvind Kumar
- Massimo V. Fischetti
- et al.
- 2005
- SISPAD 2005
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88 results for S.E. Laux
Simulation of quantum transport in small semiconductor devices
- M.V. Fischetti
- S.E. Laux
- et al.
- 2005
- SISPAD 2005
Simulation study of tunneling devices with quantum confinement in source and drain
- Y. Katayama
- S.E. Laux
- 2004
- DRC 2004
Arbitrary crystallographic orientation in QDAME with Ge 7.5 nm DGFET examples
- S.E. Laux
- 2004
- IWCE 2004
Thirty years of Monte Carlo simulations of electronic transport in semiconductors: Their relevance to science and to mainstream VLSI technology
- Massimo V. Fischetti
- Steven E. Laux
- et al.
- 2004
- IWCE 2004
Ballistic FET modeling using QDAME: Quantum device analysis by modal evaluation
- Steven E. Laux
- Arvind Kumar
- et al.
- 2002
- IEEE TNANO
Long-range coulomb interactions in small silicon devices: Transconductance and mobility degradation
- M.V. Fischetti
- S.E. Laux
- 2000
- MSM 2000
Hole-initiated impact ionization and split-off band in Ge, Si, GaAs, InAs, and InGaAs
- N. Sano
- M.V. Fischetti
- et al.
- 1998
- IWCE 1998
Monte Carlo simulation of electron transport in Si: The first 20 years
- M.V. Fischetti
- S.E. Laux
- 1996
- ESSDERC 1996
Full-band Monte Carlo simulation of high-energy transport and impact ionization of electrons and holes in Ge, Si, and GaAs
- M.V. Fischetti
- N. Sano
- et al.
- 1996
- SISPAD 1996