Transport models for advanced device simulation - truth or consequences?
- S.E. Laux
- M.V. Fischetti
- 1995
- BCTM 1995
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88 results for S.E. Laux
Monte carlo simulations of p- And n-channel dual-gate Si MOSFETs at the limits of scaling
- D.J. Frank
- S.E. Laux
- et al.
- 1993
- Device Research Conference 1993
Numerical methods for calculating self-consistent solutions of electron states in narrow channels.
- S.E. Laux
- 1987
- NASECODE 1987
Multiscale model for phonon-assisted band-to-band tunneling in semiconductors
- Arvind Ajoy
- S.E. Laux
- et al.
- 2013
- Journal of Applied Physics
Solving complex band structure problems with the FEAST eigenvalue algorithm
- S.E. Laux
- 2012
- Physical Review B - CMMP
Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model
- M.V. Fischetti
- S. Jin
- et al.
- 2009
- Journal of Computational Electronics
A simulation study of the switching times of 22- and 17-nm gate-length SOI nFETs on high mobility substrates and Si
- Steven E. Laux
- 2007
- IEEE Transactions on Electron Devices
Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain
- G.M. Cohen
- M.J. Rooks
- et al.
- 2007
- Applied Physics Letters
Quantum-based simulation analysis of scaling in ultrathin body device structures
- Arvind Kumar
- Jakub Kedzierski
- et al.
- 2005
- IEEE Transactions on Electron Devices
Thirty years of Monte Carlo simulations of electronic transport in semiconductors: Their relevance to science and mainstream VLSI technology
- M.V. Fischetti
- S.E. Laux
- et al.
- 2004
- Journal of Computational Electronics