Channel sensitivity to gate roughness in a split-gate GaAs-AlGaAs heterostructure
- Arvind Kumar
- Steven E. Laux
- et al.
- 1989
- Applied Physics Letters
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88 results for S.E. Laux
One- and zero-dimensional systems: Fabrication and characterization
- J.M. Hong
- T.P. Smith III
- et al.
- 1989
- Journal of Crystal Growth
The physics of hot-electron degradation of Si MOSFET's: Can we understand it?
- M.V. Fischetti
- S.E. Laux
- et al.
- 1989
- Applied Surface Science
Monte Carlo simulation of hot-carrier transport in real semiconductor devices
- M.V. Fischetti
- S.E. Laux
- et al.
- 1989
- Solid State Electronics
Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
- Massimo V. Fischetti
- Steven E. Laux
- 1988
- Physical Review B
Quasi-one-dimensional electron states in a split-gate GaAs/AlGaAs heterostructure
- S.E. Laux
- D.J. Frank
- et al.
- 1988
- Surface Science
A study of channel avalanche breakdown in scaled n-mosfet’s
- Steven E. Laux
- Fritz H. Gaensslen
- 1987
- IEEE T-ED
Electron states in narrow gate-induced channels in Si
- Steven E. Laux
- Frank Stern
- 1986
- Applied Physics Letters
On the Accuracy of Channel Length Characterization of LDD MOSFET's
- Jack Y.-C. Sun
- Matthew R. Wordeman
- et al.
- 1986
- IEEE T-ED
MONTE: A Program to Simulate the Heterojunction Devices in Two Dimensions
- Jeffrey Y.-F. Tang
- Steven E. Laux
- 1986
- IEEE TCADIS