Publications

105 results for Ghavam Shahidi

Scalability of Direct Silicon Bonded (DSB) technology for 32nm node and beyond
- - Haizhou Yin
  - C.Y. Sung
  - et al.
- 2007
- VLSI Technology 2007
Evolution of CMOS Technology at 32 nm and beyond
- - Ghavam G. Shahidi
- 2007
- CICC 2007
Uniaxial strain relaxation on ultra-thin strained-Si directly on insulator (SSDOI) substrates
- - Haizhou Yin
  - Z. Ren
  - et al.
- 2006
- ICSICT 2006
Direct silicon bonded (DSB) substrate solid phase epitaxy (SPE) integration scheme study for high performance bulk CMOS
- - Haizhou Yin
  - C.Y. Sung
  - et al.
- 2006
- IEDM 2006
Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- - V. Narayanan
  - V.K. Paruchuri
  - et al.
- 2006
- VLSI Technology 2006
Silicon-on-insulator MOSFETs with hybrid crystal orientations
- - M. Yang
  - K.K. Chan
  - et al.
- 2006
- VLSI Technology 2006
Integration of local stress techniques with strained-Si directly on insulator (SSDOI) substrates
- - Haizhou Yin
  - Z. Ren
  - et al.
- 2006
- VLSI Technology 2006
Optimizing CMOS technology for maximum performance
- - David J. Frank
  - Wilfried Haensch
  - et al.
- 2006
- IBM J. Res. Dev
Are we at the end of CMOS scaling?
- - Ghavam G. Shahidi
- 2006
- International Journal of High Speed Electronics and Systems
Role of oxygen vacancies in V_FB/V_t stability of pFET metals on HfO₂
- - E. Cartier
  - F.R. McFeely
  - et al.
- 2005
- VLSI Technology 2005