Electromigration comparison of selective CVD cobalt capping with PVD Ta(N) and CVD cobalt liners on 22nm-groundrule dual-damascene Cu interconnectsA. SimonTibor Bolomet al.2013IRPS 2013
Mn-dopant segregation as an indicator of barrier integrity in 32nm groundrule Cu/ultra-low K interconnectsAndrew H. SimonFrieder H. Baumannet al.2011ADMETA 2011