A Simulation Study on Minimizing Threshold Voltage Variability by Optimizing Oxygen Vacancy Concentration under Metal Gate Granularity
- Madhu Padmanabha Sumangala
- Ahish Shylendra
- et al.
- 2020
- IEEE Electron Device Letters
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4 results for Amit Ranjan Trivedi
RF SOI switch FET design and modeling tradeoffs for GSM applications
- Shyam Parthasarathy
- Amit Trivedi
- et al.
- 2010
- VLSID/Embedded 2010
A simulation study of oxygen vacancy-induced variability in HfO 2/metal gated SOI FinFET
- Amit Ranjan Trivedi
- Takashi Ando
- et al.
- 2014
- IEEE T-ED
Compact modeling of partially depleted silicon-on-insulator drain-extended MOSFET (DEMOSFET) including high-voltage and floating-body effects
- Tarun Kumar Agarwal
- Amit Ranjan Trivedi
- et al.
- 2011
- IEEE T-ED