Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects
- C.-K. Hu
- D. Canaperi
- et al.
- 2004
- IRPS 2004
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28 results for D.D. Restaino
Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL
- D. Edelstein
- H.S. Rathore
- et al.
- 2004
- IRPS 2004
Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects
- C.-K. Hu
- D. Canaperi
- et al.
- 2004
- IRPS 2004
A study of electromigration lifetime for Cu interconnects coated with CoWP, Ta/TaN, or SiC xN yH z
- C.-K. Hu
- D. Canaperi
- et al.
- 2003
- AMC 2003
Competitive and cost effective copper/low-k interconnect (BEOL) for 28 nm CMOS technologies
- R. Augur
- C. Child
- et al.
- 2012
- Microelectronic Engineering
Interface engineering for high interfacial strength between SiCOH and porous SiCOH interconnect dielectrics and diffusion caps
- A. Grill
- D. Edelstein
- et al.
- 2008
- Journal of Applied Physics
Atom motion of Cu and Co in Cu damascene lines with a CoWP cap
- C.-K. Hu
- L. Gignac
- et al.
- 2004
- Applied Physics Letters
Recent advances in the application of collimated sputtering
- B. Vollmer
- T.J. Licata
- et al.
- 1994
- Thin Solid Films