ENHANCED DIFFUSION IN SHORT TIME ANNEALED ARSENIC AND BORON ION IMPLANTED SILICON.
- T.O. Sedgwick
- S. Cohen
- et al.
- 1983
- ECS Meeting 1983
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118 results for Gottlieb S. Oehrlein
PROPERTIES OF AMORPHOUS TANTALUM PENTOXIDE THIN FILMS ON SILICON.
- G.S. Oehrlein
- 1983
- ECS Meeting 1983
ENHANCED DIFFUSION IN SHORT TIME ANNEALED ARSENIC AND BORON ION IMPLANTED SILICON.
- T.O. Sedgwick
- S. Cohen
- et al.
- 1983
- VLSI Science and Technology 1983
STUDY OF SILICON CONTAMINATION AND NEAR-SURFACE DAMAGE CAUSED BY CF//4/H//2 REACTIVE ION ETCHING.
- G.S. Oehrlein
- R.M. Tromp
- et al.
- 1983
- ECS Meeting 1983
On the Complex of the Oxygen Interstitial and the Silicon Interstitial in Silicon
- J.L. Lindstrom
- B.C. Svensson
- et al.
- 1984
- physica status solidi (a)
Silicon-oxygen complexes containing three oxygen atoms as the dominant thermal donor species in heat-treated oxygen-containing silicon
- G.S. Oehrlein
- 1983
- Journal of Applied Physics
Electrical properties of amorphous tantalum pentoxide thin films on silicon
- G.S. Oehrlein
- A. Reisman
- 1983
- Journal of Applied Physics
Models for the Hydrogen‐Related Defect—Impurity Complexes and SiH Infrared Bands in Crystalline Silicon
- T.S. Shi
- S.N. Sahu
- et al.
- 1982
- physica status solidi (a)