Modifications of growth of strained silicon and dopant activation in silicon by cryogenic ion implantation and recrystallization annealing
- Hiroshi Itokawa
- Nathaniel C. Beriiner
- et al.
- 2012
- IWJT 2012
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5 results for Jeremy A. Wahl
A 0.063 μm2 FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch
- Veeraraghvan S. Basker
- Theodorus E. Standaert
- et al.
- 2010
- VLSI Technology 2010
High Sensitivity, Low Voltage Silicon Photodetectors Compatible with Silicon Integration
- J.A. Wahl
- Dennis Rogers
- et al.
- 2001
- CLEO 2001
Physical characterization of sub-32-nm semiconductor materials and processes using advanced ion beam-based analytical techniques
- M. Hopstaken
- D. Pfeiffer
- et al.
- 2012
- Surface and Interface Analysis
Small silicon memories: Confinement, single-electron, and interface state considerations
- S. Tiwari
- J.A. Wahl
- et al.
- 2000
- Applied Physics A: Materials Science and Processing