Cold (100°C) carbon co-implantation into high phosphorus doping source/drain extensions for aggressively scaled NFETs
- Koichi Yako
- Makoto Fujiwara
- et al.
- 2011
- IWJT 2011
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Ultra-thin-body and BOX (UTBB) Fully Depleted (FD) device integration for 22nm node and beyond
- Q. Liu
- A. Yagishita
- et al.
- 2010
- VLSI Technology 2010