Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering
- Subramanian S. Iyer
- J.C. Tsang
- et al.
- 1989
- Applied Physics Letters
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135 results for James C. Tsang
Localized electronic states and resonant Raman scattering from localized and quasiresonant phonons in Si-Ge layers
- J.C. Tsang
- Subramanian S. Iyer
- et al.
- 1989
- Physical Review B
Nonlocal resonant optical phonons and the local properties of ultrathin Ge layers on Si(100)
- J.C. Tsang
- Subramanian S. Iyer
- et al.
- 1989
- Physical Review B
Growth of abrupt Ge layers in Si (100)
- Subramanian S. Iyer
- P.R. Pukite
- et al.
- 1989
- Journal of Crystal Growth
Quantitative measurements of intervalley and carrier-carrier scattering in GaAs with hot (e,A0) luminescence
- J.A. Kash
- R. Ulbrich
- et al.
- 1989
- Solid State Electronics
Raman Spectroscopy and the Characterization of Buried Semiconductor Layers
- James C. Tsang
- Subramanian S. Iyer
- 1989
- IEEE JQE
Localization and wave-vector conservation for optical phonons in AlxGa1-xAs and thin layers of GaAs
- J.A. Kash
- J.M. Hvam
- et al.
- 1988
- Physical Review B
Secondary emission studies of hot carrier relaxation in polar semiconductors
- J.A. Kash
- J.C. Tsang
- 1988
- Solid State Electronics
Detection and characterization of individual Ge layers in Si(100) using Raman spectroscopy
- J.C. Tsang
- Subramanian S. Iyer
- et al.
- 1987
- Applied Physics Letters
Symmetry forbidden Raman scattering from (100) surfaces of oxidized Si and Ge
- J.C. Tsang
- 1986
- Applied Physics Letters