Voltage polarity effects in GST-based phase change memory: Physical origins and implications
- A. Padilla
- G.W. Burr
- et al.
- 2010
- IEDM 2010
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3 results for Anthony Debunne
Voltage polarity effects in Ge2Sb2Te 5-based phase change memory devices
- Alvaro Padilla
- Geoffrey W. Burr
- et al.
- 2011
- Journal of Applied Physics
Evidence of crystallization-induced segregation in the phase change material Te-rich GST
- Anthony Debunne
- Kumar Virwani
- et al.
- 2011
- JES