RTA-driven intra-die variations in stage delay, and parametric sensitivities for 65nm technologyI. AhsanN. Zamdmeret al.2006VLSI Technology 2006
High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cellE. LeobandungH. Nayakamaet al.2005VLSI Technology 2005
Novel high-performance analog devices for advanced low-power high-k metal gate complementary metal-oxide-semiconductor technologyJin-Ping HanTakashi Shimizuet al.2011Japanese Journal of Applied Physics