Field dependence of surface mobility at n-n heterojunction interface
- L.L. Chang
- 1965
- Solid-State Electronics
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The Germanium Insulated-Gate Field-Effect Transistor (FET)
- L.L. Chang
- H.N. Yu
- 1965
- Proceedings of the IEEE
The conduction properties of GeGaAs1-xPx n-n heterojunctions
- L.L. Chang
- 1965
- Solid-State Electronics
The junction depth of concentration-dependent diffusion. Zinc in III-V compounds
- L.L. Chang
- 1964
- Solid-State Electronics