Surface inversion and accumulation of anodized InSb
- L.L. Chang
- W.E. Howard
- 2004
- Applied Physics Letters
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164 results for L.L. Chang
Electron tunneling between a metal and a semiconductor: Characteristics of Al-Al2O3-SnTe and -GeTe junctions
- L.L. Chang
- P.J. Stiles
- et al.
- 2004
- Journal of Applied Physics
GeTeSingle Bond signGaAs tunnel junction: A negative-resistance schottky-type barrier
- L.L. Chang
- L. Esaki
- et al.
- 2003
- Journal of Applied Physics
Conductance extrema in metal - insulator - semiconductor tunnel junctions
- L.L. Chang
- 2003
- Journal of Applied Physics
Vacancy association of defects in annealed GaAs
- L.L. Chang
- L. Esaki
- et al.
- 2003
- Applied Physics Letters
High-field photoconductivity of amorphous GeTe and GeSe films
- P.J. Stiles
- L.L. Chang
- et al.
- 2003
- Applied Physics Letters
Profiling of periodic structures (GaAsSingle Bond signGaAlAs) by nuclear backscattering
- J.W. Mayer
- J.F. Ziegler
- et al.
- 2003
- Journal of Applied Physics
Molecular beam epitaxy of alternating metal-semiconductor films
- R. Ludeke
- L.L. Chang
- et al.
- 2003
- Applied Physics Letters
Ga1-x Alx As superlattices profiled by auger electron spectroscopy
- R. Ludeke
- L. Esaki
- et al.
- 2003
- Applied Physics Letters
Interpretation of scanning high-energy electron diffraction measurements with application to GaAs surfaces
- D.B. Dove
- R. Ludeke
- et al.
- 2003
- Journal of Applied Physics