Summary Abstract: Plasma potentials of 13.56 MHz rf argon glow discharges in a planar system
- K. Kehler
- J.W. Coburn
- et al.
- 1985
- JVSTA
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51 results for J.W. Coburn
Frequency dependence of ion bombardment of grounded surfaces in rf argon glow discharges in a planar system
- K. Köhler
- D.E. Horne
- et al.
- 1985
- Journal of Applied Physics
Plasma-assisted etching: Ion-assisted surface chemistry
- J.W. Coburn
- Harold F. Winters
- 1985
- Applications of Surface Science
Physical and chemical mechanisms in the ion-enhanced etching of silicon
- JW Coburn
- 1984
- Vacuum
Summary Abstract: Surface processes in plasma-assisted etching environments
- Harold F. Winters
- J.W. Coburn
- et al.
- 1983
- JVSTA
A SIMS study of ion-assisted etching mechanisms; adsorbed fluorine on Si removed by ion bombardment
- E.-A. Knabbe
- J.W. Coburn
- et al.
- 1982
- Surface Science
Plasma-assisted etching
- J.W. Coburn
- 1982
- Plasma Chemistry and Plasma Processing
Ion-enhanced gas-surface chemistry: The influence of the mass of the incident ion
- U. Gerlach-Meyer
- J.W. Coburn
- et al.
- 1981
- Surface Science
The influence of ion sputtering on the elemental analysis of solid surfaces
- J.W. Coburn
- 1979
- Thin Solid Films
An XPS and Auger investigation of CF+3 ion bombardment of silicon
- T.J. Chuang
- H.F. Winters
- et al.
- 1979
- Applications of Surface Science