Radiochemical determination of damage profiles in silicon
- B.J. Masters
- J.M. Fairfield
- et al.
- 2006
- Radiation Effects
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High-Dose Implantations of P, As, and Sb in Silicon: A Comparison of Room-Temperature Implantations Followed by a 550°C Anneal and Implantations Conducted at 600°C
- Billy L. Crowder
- John M. Fairfield
- 1970
- JES