1, μm MOSFET VLSI Technology: Part IV-Hot-Electron Design Constraints
- Tak H. Ning
- Peter W. Cook
- et al.
- 1979
- IEEE JSSC
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22 results for C.M. Osburn
1 μm MOSFET VLSI Technology: Part IV—Hot-Electron Design Constraints
- Tak H. Ning
- Peter W. Cook
- et al.
- 1979
- IEEE T-ED
1 µm MOSFET VLSI Technology: Part V—A Single-Level Polysilicon Technology Using Electron-Beam Lithography
- William R. Hunter
- Linda Ephrath
- et al.
- 1979
- IEEE JSSC
1 µm MOSFET VLSI Technology: Part I-An Overview
- Dale L. Critchlow
- Arnold Reisman
- et al.
- 1979
- IEEE JSSC
Effect of electron trapping on IGFET characteristics
- T.H. Ning
- C.M. Osburn
- et al.
- 1977
- Journal of Electronic Materials
Conditions for the Absence of Thermal Breakdown in Silicon Nitride
- Nicholas Klein
- Carlton M. Osburn
- 1977
- IEEE T-ED
Characterization of thin oxide films for FET applications
- C.M. Osburn
- 1975
- Journal of Solid State Chemistry
Absence of non-shorting breakdown behaviour in AlSi3N4Si structures
- N. Klein
- C.M. Osburn
- et al.
- 1975
- Thin Solid Films
The influence of silicon heat treatments on the minority carrier generation and the dielectric breakdown in MOS structures
- J.M. Green
- C.M. Osburn
- et al.
- 1974
- Journal of Electronic Materials
The Effect of Silicon Wafer Imperfections on Minority Carrier Generation and Dielectric Breakdown in MOS Structures
- C.M. Osburn
- D.W. Ormond
- 1974
- JES