Publications

22 results for C.M. Osburn

1 μm MOSFET VLSI Technology: Part V—A Single-Level Polysilicon Technology Using Electron-Beam Lithography
- - William R. Hunter
  - Linda Ephrath
  - et al.
- 1979
- IEEE T-ED
1 µm MOSFET VLSI Technology: Part 1-An Overview
- - Hwa-Nien Yu
  - Arnold Reisman
  - et al.
- 1979
- IEEE T-ED
1 µm MOSFET VLSI Technology: Part I-An Overview
- - Dale L. Critchlow
  - Arnold Reisman
  - et al.
- 1979
- IEEE JSSC
1 μm MOSFET VLSI Technology: Part IV—Hot-Electron Design Constraints
- - Tak H. Ning
  - Peter W. Cook
  - et al.
- 1979
- IEEE T-ED
Effect of electron trapping on IGFET characteristics
- - T.H. Ning
  - C.M. Osburn
  - et al.
- 1977
- Journal of Electronic Materials
Conditions for the Absence of Thermal Breakdown in Silicon Nitride
- - Nicholas Klein
  - Carlton M. Osburn
- 1977
- IEEE T-ED
Characterization of thin oxide films for FET applications
- - C.M. Osburn
- 1975
- Journal of Solid State Chemistry
Absence of non-shorting breakdown behaviour in AlSi₃N₄Si structures
- - N. Klein
  - C.M. Osburn
  - et al.
- 1975
- Thin Solid Films
The influence of silicon heat treatments on the minority carrier generation and the dielectric breakdown in MOS structures
- - J.M. Green
  - C.M. Osburn
  - et al.
- 1974
- Journal of Electronic Materials
Sodium-Induced Barrier-Height Lowering and Dielectric Breakdown on SiO₂ Films on Silicon
- - C.M. Osburn
  - D.W. Ormond
- 1974
- JES