Temperature dependence of the Schottky-barrier height of tungsten on n-type and p-type silicon
- M.O. Aboelfotoh
- 1991
- Solid State Electronics
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Formation, oxidation, electronic, and electrical properties of copper silicides
- A. Cros
- M.O. Aboelfotoh
- et al.
- 1990
- Journal of Applied Physics
Schottky-barrier behavior of copper and copper silicide on n-type and p-type silicon
- M.O. Aboelfotoh
- A. Cros
- et al.
- 1990
- Physical Review B
Electrical characteristics of Ti-Si(100) interfaces
- M.O. Aboelfotoh
- L. Stolt
- et al.
- 1989
- Thin Solid Films
Influence of thin interfacial silicon oxide layers on the Schottky-barrier behavior of Ti on Si(100)
- M.O. Aboelfotoh
- 1989
- Physical Review B
Electrical characteristics of W-Si(100) Schottky barrier junctions
- M.O. Aboelfotoh
- 1989
- Journal of Applied Physics
Electrical characteristics of Ti/Si(100) interfaces
- M.O. Aboelfotoh
- 1988
- Journal of Applied Physics
Transmission electron microscope study of the formation of Ni2Si and NiSi on amorphous silicon
- M.O. Aboelfotoh
- H.M. Tawancy
- et al.
- 1987
- Applied Physics Letters
Transport in refractory metals and their interaction with SiO2: Comparison of tungsten and molybdenum
- L. Krusin-Elbaum
- M.O. Aboelfotoh
- et al.
- 1987
- Thin Solid Films
Experimental observations of transient phases during long‐range ordering to Ni4Mo in a NiMoFeCr alloy
- H.M. Tawancy
- M.O. Aboelfotoh
- 1987
- physica status solidi (a)