Ideal Al-Ge(001) interface: From chemisorption to metallization of the Al overlayerInder P. BatraS. Ciraci1984Physical Review B
Bonding and electronic structure of the GaAs(1 1 0)-Al interfaceS. CiraciI.P. Batra1984Solid State Communications
Electronic structure of the Oxygen overlayer on Al(100)I.P. BatraS. Ciraci1977Physical Review Letters
Comparative study of the electronic structure of (SN)x and its precursor S2N2 using the extended tight-binding methodI.P. BatraS. Ciraciet al.1977Physical Review B
Electronic-energy-structure calculations of silicon and silicon dioxide using the extended tight-binding methodS. CiraciI.P. Batra1977Physical Review B
Study of the diamond (100) surface using the self-consistent-field extended tight-binding methodS. CiraciI.P. Batra1977Physical Review B
Commentary on the effect of relaxation on the electronic-energy-level structure of the Si(111) surfaceI.P. BatraS. Ciraci1976Physical Review Letters
New interpretation of the angular-resolved photoemission measurements from cleaved siliconS. CiraciI.P. Batra1976Solid State Communications
Electronic structure of the (111) surface of semiconductorsS. CiraciI.P. Batraet al.1975Physical Review B