Scaling deep trench based eDRAM on SOI to 32nm and beyond
- G. Wang
- D. Anand
- et al.
- 2009
- IEDM 2009
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14283 results for Physical Sciences
1D Broken-gap tunnel transistor with MOSFET-like on-currents and sub-60mV/dec subthreshold swing
- Siyuranga O. Koswatta
- Steven J. Koester
- et al.
- 2009
- IEDM 2009
Physical model of the impact of metal grain work function variability on emerging dual metal gate MOSFETs and its implication for SRAM reliability
- Xiao Zhang
- Jing Li
- et al.
- 2009
- IEDM 2009
Competitive and cost effective high-k based 28nm CMOS technology for low power applications
- F. Arnaud
- A. Thean
- et al.
- 2009
- IEDM 2009
High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling
- S. Bangsaruntip
- G.M. Cohen
- et al.
- 2009
- IEDM 2009
Development of graphene FETs for high frequency electronics
- Yu-Ming Lin
- Keith Jenkins
- et al.
- 2009
- IEDM 2009
Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and V t-tuning dipoles with gate-first process
- T. Ando
- M.M. Frank
- et al.
- 2009
- IEDM 2009
A non-iterative compact model for carbon nanotube FETs incorporating source exhaustion effects
- Lan Wei
- David J. Frank
- et al.
- 2009
- IEDM 2009
Fermi level depinning at metal-organic semiconductor interface for low-resistance ohmic contacts
- Zihong Liu
- Masaharu Kobayashi
- et al.
- 2009
- IEDM 2009
Trigate 6T SRAM scaling to 0.06 μm2
- M. Guillorn
- J. Chang
- et al.
- 2009
- IEDM 2009