Degradation of ultra-thin oxides with tungsten gates under high voltage: Wear-out and breakdown transient
- F. Palumbo
- S. Lombardo
- et al.
- 2004
- IRPS 2004
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20 results at IRPS 2004
Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL
- D. Edelstein
- H.S. Rathore
- et al.
- 2004
- IRPS 2004
Measurements of effective thermal conductivity for advanced interconnect structures with various composite low-k dielectrics
- F. Chen
- J. Gill
- et al.
- 2004
- IRPS 2004
Model-based guidelines to suppress cable discharge event (CDE) induced latchup in CMOS ICs
- K. Chatty
- P.E. Cottrell
- et al.
- 2004
- IRPS 2004
Broad energy distribution of NBTI-induced interface states in p-MOSFETs with ultra-thin nitrided oxide
- J.H. Stathis
- G. Larosa
- et al.
- 2004
- IRPS 2004
SRAM ser in 90, 130 and 180 nm bulk and SOI technologies
- Ethan H. Cannon
- Daniel D. Reinhardt
- et al.
- 2004
- IRPS 2004
Reliability and design qualification of a sub-micron tungsten silicide E-Fuse
- W.R. Tonti
- J.A. Fifield
- et al.
- 2004
- IRPS 2004
Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects
- C.-K. Hu
- D. Canaperi
- et al.
- 2004
- IRPS 2004
Magnetoresistive random access memory (MRAM) and reliability
- Brian Hughes
- 2004
- IRPS 2004
Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
- R. Filippi
- J.F. McGrath
- et al.
- 2004
- IRPS 2004