Modeling of germanium and antimony diffusion in Si1.xGe x
- Huilong Zhu
- 2004
- ECS Meeting 2004
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17 results at ECS Meeting 2004
Strained-silicon / silicon-germanium-on-insulator for high-performance CMOS : A manufacturable process for 300 mm substrates
- A. Reznicek
- S.W. Bedell
- et al.
- 2004
- ECS Meeting 2004
SiGe MODFETS: Overview and issues for sub-100 nm gate-length scaling
- S.J. Koester
- K.L. Saenger
- et al.
- 2004
- ECS Meeting 2004
Retardation of arsenic diffusion in silicon-germanium by co-implantation
- Omer Dokumaci
- Paul Ronsheim
- et al.
- 2004
- ECS Meeting 2004
A hydrogen pre-bake process for Si epitaxy on sige surface
- H. Chen
- S.W. Bedell
- et al.
- 2004
- ECS Meeting 2004
Outlook and opportunities for hetero-epitaxy in SI CMOS technology and beyond
- S.J. Koester
- 2004
- ECS Meeting 2004
Sub-30 NM abrupt junction formation in strained silicon/silicon-germanium CMOS device
- K.-L. Lee
- F. Cardone
- et al.
- 2004
- ECS Meeting 2004