Post-breakdown statistics and acceleration characteristics in high-K dielectric stacksErnest WuJordi Suneet al.2011IRPS 2011
Analysis of recoverable and non-recoverable NBTI and PBTI using AC and DC stressesFrederic MonsieurEduard Cartieret al.2011IRPS 2011
Metastability of hydrogenated amorphous silicon passivation on crystalline silicon and implication to photovoltaic devicesBahman HekmatshoarDavood Shahrjerdiet al.2011IRPS 2011
Impact of source/drain contact and gate finger spacing on the RF reliability of 45-nm RF nMOSFETsRajan AroraSachin Sethet al.2011IRPS 2011