Reliability monitoring ring oscillator structures for isolated/combined NBTI and PBTI measurement in high-k metal gate technologiesJae-Joon KimBarry P. Linderet al.2011IRPS 2011
Bias Temperature Instability model for digital circuits - Predicting instantaneous FET responseAditya BansalKai Zhaoet al.2011IRPS 2011
Spectral resolution of photon emission from SiGe:C heterojunction bipolar transistors (HBTs)Ulrike KindereitOana-Mihaela Mutihacet al.2011IRPS 2011
Impact of source/drain contact and gate finger spacing on the RF reliability of 45-nm RF nMOSFETsRajan AroraSachin Sethet al.2011IRPS 2011