Rate of formation of silicon dioxide; Semiconducting ruthenium silicide
- F.M. D'Heurle
- R.D. Frampton
- et al.
- 1985
- Applied Physics Letters
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2347 results at Applied Physics Letters
Non-alloyed ohmic contact to n-GaAs by solid phase epitaxy
- E.D. Marshall
- W.X. Chen
- et al.
- 1985
- Applied Physics Letters
Thermal and chemical stability of Schottky metallization on GaAs
- S.S. Lau
- W.X. Chen
- et al.
- 1985
- Applied Physics Letters
Growth of molybdenum and tungsten on GaAs in a molecular beam epitaxy system
- J. Bloch
- M. Heiblum
- et al.
- 1985
- Applied Physics Letters
High-speed electroplating of copper using the laser-jet technique
- R.J. Von Gutfeld
- D.R. Vigliotti
- 1985
- Applied Physics Letters
Tungsten-platinum alloy Schottky barriers on n-type GaAs
- T. Okumura
- K.N. Tu
- 1985
- Applied Physics Letters
Doping effects in reactive plasma etching of heavily doped silicon
- Young H. Lee
- Mao-Min Chen
- et al.
- 1985
- Applied Physics Letters
Technological applications of scanning tunneling microscopy at atmospheric pressure
- R. Miranda
- N. García
- et al.
- 1985
- Applied Physics Letters
Low-resistance nonalloyed ohmic contacts to Si-doped molecular beam epitaxial GaAs
- P.D. Kirchner
- T.N. Jackson
- et al.
- 1985
- Applied Physics Letters
Photochemical generation and deposition of copper from a gas phase precursor
- C.R. Jones
- F.A. Houle
- et al.
- 1985
- Applied Physics Letters