Single-event-upset critical charge measurements and modeling of 65 nm silicon-on-insulator latches and memory cells
- David F. Heidel
- Kenneth P. Rodbell
- et al.
- 2006
- IEEE TNS
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Modeling single-event upsets in 65-nm silicon-on-insulator semiconductor devices
- A.J. KleinOsowski
- Phil Oldiges
- et al.
- 2006
- IEEE TNS
Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI
- Tianbing Chen
- Akil K. Sutton
- et al.
- 2005
- IEEE TNS
Bias-temperature instabilities and radiation effects in MOS devices
- X.J. Zhou
- D.M. Fleetwood
- et al.
- 2005
- IEEE TNS
Charge trapping and annealing in high-k gate dielectrics
- James A. Felix
- Marty R. Shaneyfelt
- et al.
- 2004
- IEEE TNS
Proton radiation response of monolithic millimeter-wave transceiver building blocks implemented in 200 GHz SiGe technology
- Wei-Min Lance Kuo
- Yuan Lu
- et al.
- 2004
- IEEE TNS
Measurement of the flux and energy spectrum of cosmic-ray induced neutrons on the ground
- M. Gordon
- P. Goldhagen
- et al.
- 2004
- IEEE TNS
SEMM-2: A modeling system for single event upset analysis
- Henry H. K. Tang
- Ethan H. Cannon
- 2004
- IEEE TNS
Theoretical determination of the temporal and spatial structure of α-particle induced electron-hole pair generation in silicon
- Phil Oldiges
- Robert Dennard
- et al.
- 2000
- IEEE TNS
Total-dose and SEU characterization of 0.25 micron CMOS/SOI integrated circuit memory technologies
- C. Brothers
- R. Pugh
- et al.
- 1997
- IEEE TNS