Patterning of 100 nm features using X-ray lithography
- Azalia A. Krasnoperova
- Scott Hector
- et al.
- 1997
- J. Photopolym. Sci. Tech.
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68 results at J. Photopolym. Sci. Tech.
A commercially viable 193 nm single layer resist platform
- F.M. Houlihan
- Thomas I. Wallow
- et al.
- 1997
- J. Photopolym. Sci. Tech.
Progress in 193 nm positive resists
- R.D. Allen
- R. Soortyakumaran
- et al.
- 1996
- J. Photopolym. Sci. Tech.
193 nm photoresist r&d: the risk & challenge
- Donald C. Hofer
- Robert Allen
- et al.
- 1996
- J. Photopolym. Sci. Tech.
Lithographic feasibility of escap beyond quarter micron
- Hiroshi Ito
- Greg Breyta
- et al.
- 1996
- J. Photopolym. Sci. Tech.
Nematic homogeneous photo alignment by polyimide exposure to linearly polarized uv
- Masaki Hasegawa
- Yoichi Taira
- 1995
- J. Photopolym. Sci. Tech.
Resolution and etch resistance of a family of 193 nm positive resists
- R.D. Allen
- I.Y. Wan
- et al.
- 1995
- J. Photopolym. Sci. Tech.
Fundamental studies of airborne chemical contamination of chemically amplified resists
- W.D. Hinsberg
- Scott A. MacDonald
- et al.
- 1993
- J. Photopolym. Sci. Tech.
Designing high performance KrF and ArF single layer resists with methacrylate polymers
- Robert D. Allen
- Gregory M. Wallraff
- et al.
- 1993
- J. Photopolym. Sci. Tech.
Approach toward environmental stabilization of chemical amplification resists
- Hiroshi Ito
- William P. England
- et al.
- 1993
- J. Photopolym. Sci. Tech.