Lanthanide gallate perovskite-type substrates for epitaxial, high-Tc superconducting Ba2YCu3O7-δ filmsE.A. GiessR.L. Sandstromet al.1990IBM J. Res. Dev
Surface chemistry of the WF6-based chemical vapor deposition of tungstenM.L. YuK.Y. Ahnet al.1990IBM J. Res. Dev
Low-temperature Si and Si:Ge epitaxy by ultrahigh-vacuum/chemical vapor deposition. Process fundamentalsB.S. Meyerson1990IBM J. Res. Dev
Internal probing of submicron FETs and photoemission using individual oxide trapsP. RestleAntonio Gnudi1990IBM J. Res. Dev
Picosecond noninvasive optical detection of internal electrical signals in flip-chip-mounted silicon integrated circuitsH. Heinrich1990IBM J. Res. Dev