Oxide breakdown model and its impact on SRAM cell functionalityR. RodríguezR.V. Joshiet al.2003SISPAD 2003
Implications of gate design on RF performance of sub-100 nm strained-Si/SiGe nMODFETsQ. OuyangS.J. Koesteret al.2003SISPAD 2003
Physical compact model for threshold voltage in short-channel double-gate devicesKeunwoo KimJ.G. Fossumet al.2003SISPAD 2003