Performance elements for 28nm gate length bulk devices with gate first high-k metal gate
- Jun Yuan
- C. Gruensfelder
- et al.
- 2010
- ICSICT 2010
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9 results at ICSICT 2010
Phase formation and stability of Ni silicide contacts - Scaling to ultra-thin films
- C. Detavernier
- K. De Keyser
- et al.
- 2010
- ICSICT 2010
Patternable low-κ material for "greener" semiconductor manufacturing
- Qinghuang Lin
- Shyng-Tsong Chen
- et al.
- 2010
- ICSICT 2010
Emerging nonvolatile magnetic memory technologies
- William J. Gallagher
- 2010
- ICSICT 2010
Modeling low frequency noise in PDSOI MOSFETs for analog and RF applications
- Saurabh Sirohi
- Sourabh Khandelwal
- 2010
- ICSICT 2010
Storage class memory
- Chung H. Lam
- 2010
- ICSICT 2010
Carbon based graphene nanoelectronics technologies
- Chun Yung Sung
- 2010
- ICSICT 2010
Modeling the amorphous state of phase change memory
- Yen-Hao Shih
- M.H. Lee
- et al.
- 2010
- ICSICT 2010
Current transport, gate dielectrics and band gap engineering in graphene devices
- Wenjuan Zhu
- Vasili Perebeinos
- et al.
- 2010
- ICSICT 2010