Ionized-PVD stacked barrier structure of TaN/TaRu for 32nm BEOL integration
- Takeshi Nogami
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
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7 results at ADMETA 2008
Copper contact metallization using Ru-based barrier liners for 45 nm and 32 nm nodes: Reliability and device performance
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
Material and process for advanced Cu/ULK integration
- Chih-Chao Yang
- Daniel C. Edelstein
- et al.
- 2008
- ADMETA 2008
Porous low-k material etch for 32 nm and beyond
- Catherine Labelle
- John Arnold
- et al.
- 2008
- ADMETA 2008
Integration compatible porous SiCOH dielectrics from 45 to 22 nm
- S. Gates
- A. Grill
- et al.
- 2008
- ADMETA 2008
Interconnect performance and scaling strategy for the 22 nm node and beyond
- James H.-C. Chen
- Lijun Jiang
- et al.
- 2008
- ADMETA 2008
Advanced bilayer low-k dielectric cap for reliable high performance Cu-low k interconnects
- Griselda Bonilla
- Lawrence A. Clevenger
- et al.
- 2008
- ADMETA 2008