A high reliability Metal Insulator Metal capacitor for 0.18 μm Copper technology
- M. Armacost
- A. Augustin
- et al.
- 2000
- IEDM 2000
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4 results at IEDM 2000
Controlling floating-body effects for 0.13μm and 0.10μm SOI CMOS
- S.K.H. Fung
- N. Zamdmer
- et al.
- 2000
- IEDM 2000
Prospects for quantum computing
- D.P. DiVincenzo
- 2000
- IEDM 2000
80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications
- D.A. Buchanan
- E. Gusev
- et al.
- 2000
- IEDM 2000