Patterning of N:Ge2Sb2Te5 films and the characterization of etch induced modification for non-volatile phase change memory applications
- E. Joseph
- T.D. Happ
- et al.
- 2008
- VLSI-TSA 2008
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8 results at VLSI-TSA 2008
Extending technology roadmap by selective device footprint scaling and parasitics engineering
- Jie Deng
- Lan Wei
- et al.
- 2008
- VLSI-TSA 2008
Post CMOS nanoelectronics research for the next generation logic switches
- C.Y. Sung
- 2008
- VLSI-TSA 2008
Access transistor design and optimization for 65/45nm high performance SOI eDRAM
- G. Wang
- P. Parries
- et al.
- 2008
- VLSI-TSA 2008
Cell design considerations for phase change memory as a universal memory
- Chung Lam
- 2008
- VLSI-TSA 2008
Optimized scaling of diode array design for 32NM node phase change memory
- Kailiang Lu
- Bipin Rajendran
- et al.
- 2008
- VLSI-TSA 2008
Progress and future of carbon-based electronics
- Yu-Ming Lin
- 2008
- VLSI-TSA 2008
Effect of end-of-range defects on device leakage in direct silicon bonded (DSB) technology
- Haizhou Yin
- M. Hamaguchi
- et al.
- 2008
- VLSI-TSA 2008