A high performance low temperature 0.3 μm CMOS on SIMOX
- G. Shahidi
- B. Bucclot
- et al.
- 1992
- VLSI Technology 1992
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4 results at VLSI Technology 1992
An epitaxial emitter cap, SiGe-base bipolar technology with 22 ps ECL gate delay at liquid nitrogen temperature
- John D. Cresslcr
- James H. Comfort
- et al.
- 1992
- VLSI Technology 1992
A high performance BiCMOS technology using 0.25 μm CMOS and double poly 47 GHz bipolar
- G. Shahidi
- J. Warnock
- et al.
- 1992
- VLSI Technology 1992
Perimeter effects in small geometry bipolar transistors
- Wai Lcc
- Jack Y.-C. Sun
- et al.
- 1992
- VLSI Technology 1992