PECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devicesK. IdaS. Nguyenet al.2005AMC 2005
A SiCOH BEOL interconnect technology for high density and high performance 65 nm CMOS applicationsMatthew AngyalJason Gillet al.2005AMC 2005
Use of difunctional silylation agents for enhanced repair of post plasma damaged porous low k dielectricsS.V. NittaS. Purushothamanet al.2005AMC 2005
Evaluation of device damage from e-beam curing of ultra low-k BEOL dielectricsS. MehtaC. Dimitrakopouloset al.2005AMC 2005
BEOL process integration with Cu/SiCOH (k=2.8) low-k interconnects at 65nm groundrulesS. LaneM. Fukasawaet al.2005AMC 2005
Damascene copper integration impact on electomigration and stress migrationAnthony K. StamperH. Bakset al.2005AMC 2005