Modeling of the diffusion of implanted boron in strained Si/Si1-xGexHuilong ZhuKam-Leung Leeet al.2002SISPAD 2002
A comprehensive simulation study of strained-Si/SiGe nMODFET scaling for RF applicationsQiqing Christine OuyangS.J. Koesteret al.2002SISPAD 2002
On the optimal shape and location of silicided source and drain contactsP. OldigesC.S. Murthyet al.2002SISPAD 2002