Publications

6 results at Symposium on Process Physics and Modeling in Semiconductor Technology 1990

First-principles calculations of diffusion constants in silicon
- - Peter E. Bloechl
  - C.G. Van de Walle
  - et al.
- 1990
- Symposium on Process Physics and Modeling in Semiconductor Technology 1990
Stress-driven segregation at a Si-Ge alloy surface
- - J. Tersoff
  - P.C. Kelires
- 1990
- Symposium on Process Physics and Modeling in Semiconductor Technology 1990
Surface processes in plasma-assisted etching
- - J.W. Coburn
- 1990
- Symposium on Process Physics and Modeling in Semiconductor Technology 1990
Damage enhanced diffusion
- - Alwin E. Michel
- 1990
- Symposium on Process Physics and Modeling in Semiconductor Technology 1990
Passivation of dopants in ion implanted and rapid thermally annealed GaAs in H⁺ plasma environment
- - J.P. de Souza
  - D.K. Sadana
  - et al.
- 1990
- Symposium on Process Physics and Modeling in Semiconductor Technology 1990
Mechanisms and models of Si film growth from SiH₄ and Si₂H₆
- - S. Gates
  - S.K. Kulkarni
  - et al.
- 1990
- Symposium on Process Physics and Modeling in Semiconductor Technology 1990

First-principles calculations of diffusion constants in silicon