Analysis of systematic and random variation of gate-induced drain leakage in silicon-germanium channel pFET
- Vishal A. Tiwari
- Ch. L. N. Pavan
- et al.
- 2016
- ICEE 2016
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3 results at ICEE 2016
Comparison of heat outflow in dense sub-14nm contemporary NFETs: Bulk/SOI, inserted-oxide FinFET and nanowire FET
- Ishita Jain
- Anshul Gupta
- et al.
- 2016
- ICEE 2016
7-nm Nanowire FET process variation modeling using industry standard BSIM-CMG model
- R. Singh
- K. Aditya
- et al.
- 2016
- ICEE 2016