NEW RELIABLE STRUCTURE FOR HIGH TEMPERATURE MEASUREMENT OF SILICON WAFERS USING A SPECIALLY ATTACHED THERMOCOUPLE.S. CohenT.O. Sedgwicket al.1983MRS Proceedings 1983
LASER-SOLID INTERACTIONS: LOCALIZATION OF MOMENTUM AND OF ENERGY.J.A. Van Vechten1983MRS Proceedings 1983
SHORT TIME ANNEALING OF As AND B ION IMPLANTED Si USING TUNGSTEN-HALOGEN LAMPS.T.O. SedgwickR. Kalishet al.1983MRS Proceedings 1983