Analysis of TSV geometric parameter impact on switching noise in 3D power distribution networkHuanyu HeJames J.-Q. Luet al.2014ASMC 2014
CD-SEM metrology evaluation of gate-all-around Si nanowire MOSFET with improved control of nanowire suspension by using a buried boron nitride etch-stop layerGuy M. CohenLeathen Shiet al.2014ASMC 2014