Graphene-based fast electronics and optoelectronics
- Ph. Avouris
- Yu-Ming Lin
- et al.
- 2010
- DRC 2010
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8 results at DRC 2010
Gate-all-around silicon nanowire MOSFETs and circuits
- Jeffrey W. Sleight
- Sarunya Bangsaruntip
- et al.
- 2010
- DRC 2010
Improve variability in carbon nanotube FETs by scaling
- Yanning Sun
- George Tuleski
- et al.
- 2010
- DRC 2010
Geometry dependent tunnel FET performance - Dilemma of electrostatics vs. quantum confinement
- Yeqing Lu
- Alan C. Seabaugh
- et al.
- 2010
- DRC 2010
Switching probability in all-perpendicular spin valves
- D. Bedau
- H. Liu
- et al.
- 2010
- DRC 2010
Device characteristics of single-layer graphene FETs grown on copper
- Kristof Tahy
- Margaret Jane Fleming
- et al.
- 2010
- DRC 2010
Channel and contact length scaling in carbon nanotube transistors
- Aaron D. Franklin
- Ageeth A. Bol
- et al.
- 2010
- DRC 2010
Interface state density measurements in gated p-i-n silicon nanowires as a function of the nanowire diameter
- Guy Cohen
- E. Cartier
- et al.
- 2010
- DRC 2010