Characteristics of high responsivity 8.5 μm InGaAs/InP QWIPs grown by metalorganic vapour phase epitaxy
- B.M. Arora
- A. Majumdar
- et al.
- 2007
- Infrared Physics and Technology
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Nanometer thin-film Ni-NiO-Ni diodes for detection and mixing of 30 THz radiation
- C. Fumeaux
- W. Herrmann
- et al.
- 1998
- Infrared Physics and Technology
Mixing of 28 THz (10.7 μm) CO2-laser radiation by nanometer thin-film Ni-NiO-Ni diodes with difference frequencies up to 176 GHz
- C. Fumeaux
- W. Herrmann
- et al.
- 1997
- Infrared Physics and Technology